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參數(shù)資料
| 型號： | TC253SPD-30 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Impactron High Sensitivity CCD (Non-Cooled) |
| 中文描述： | Impactron 高靈敏度 CCD（非冷卻） |
| 文件頁數(shù)： | 6/21頁 |
| 文件大小： | 286K |
| 代理商： | TC253SPD-30 |
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JULY 2003 SOCS085
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
+ + + + + + + + + + + + + + + + + + + + + + + + +
n Buried Channel
p Substrate
p+
Virtual Phase
X
Pixel Cross Section
Channel Potential
Integrated
Charge
IAG2/SAG2
IAG1/SAG1
Polysilicon Gates
Figure 1. Image Area and Storage Area Pixel Cross Section with Potential Diagram
advanced lateral overflow drain
The advanced lateral overflow drain structure is shared by two neighboring pixels in each line. Varying the dc
bias of the antiblooming drain controls the blooming protection level and trades it for well capacity. Applying a
pulse to the drain, approximately 7 V above the nominal level for a minimum of 1
μ
s, removes all charge from
the pixels. This feature permits precise control of the integration time on a frame-by-frame basis. The
single-pulse clearing capability also reduces smear by eliminating accumulated charge in pixels before the start
of the integration period (single-sided smear). The application of a negative 0.5-V pulse to the antiblooming
drain during the parallel transfer is recommended. This pulse prevents the creation of undesirable artifacts
caused by the on-chip cross talk between the image area gate clock lines and the antiblooming drain bias lines.
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