參數(shù)資料
型號(hào)： TC1300
廠商： Microchip Technology Inc.
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： 300 mA CMOS LDO with Shutdown, Bypass and Independent Delayed Reset Function
中文描述： 300毫安的CMOS低壓降穩(wěn)壓器，帶有關(guān)斷，繞道和獨(dú)立延遲復(fù)位功能
文件頁(yè)數(shù)： 4/16頁(yè)
文件大?。?/td> 326K
代理商： TC1300
TC1300
DS21385C-page 4
2002 Microchip Technology Inc.
RESET Output
Voltage Range
V
DET
1.0
1.2
—
—
6.0
6.0
V
T
A
= 0°C to +70°C
T
A
= – 40°C to +125°C
Reset Threshold
V
TH
2.59
2.63
2.66
V
TC1300R-XX, T
A
= +25°C
2.55
—
2.70
TC1300R-XX,
T
A
= – 40°C to +125°C
2.36
2.40
2.43
TC1300Y-XX, T
A
= +25°C
2.32
—
2.47
TC1300Y-XX,
T
A
= – 40°C to +125°C
Reset Threshold Tempco
V
TH
/
T
—
30
—
ppm/°C
V
DET
to Reset Delay
t
RPD
—
160
—
μsec
V
DET
= V
TH
to (V
TH
– 100 mV)
Reset Active Timeout Period
t
RPU
140
300
560
msec
RESET Output Voltage Low
V
OL
—
—
0.3
V
V
DET
= V
TH
min,
I
SINK
= 1.2 mA
RESET Output Voltage High
V
OH
0.8 V
DET
—
—
V
V
DET
> V
TH
max,
I
SOURCE
= 500 μA
ELECTRICAL CHARACTERISTICS (CONTINUED)
V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3 μF, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
BOLDFACE
type specifications apply
for junction temperature
(Note 8)
of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note
1:
V
R
is the regulator output voltage setting.
2:
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see
Section 4.0,
“Thermal Considerations”, of this data
sheet for more details.
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
(V
R
+ V
DROPOUT
).
The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
4:
5:
6:
7:
8:
TCVOUT
-VOUTMAX
VOUTMIN
VOUT
–
(
)
106
×
T
×
=
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