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參數(shù)資料
| 型號(hào)： | TC1301 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Noise and Medium Power GaAs FETs |
| 中文描述： | 低噪聲和中等功率GaAs場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 206K |
| 代理商： | TC1301 |
TC1301
REV.2_04/12/2004
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
P 1 / 6
Fax: 886-6-5051602
Low Noise and Medium Power GaAs FETs
FEATURES
Low Noise Figure:
NF = 0.8 dB Typical at 12 GHz
High Associated Gain:
Ga = 10 dB Typical at 12 GHz
High Dynamic Range:
1 dB Compression Power P
-1
= 24 dBm at 12 GHz
Breakdown Voltage:
BV
DGO
≥
9 V
Lg = 0.25
μ
m, Wg = 600
μ
m
All-Gold Metallization for High Reliability
100 % DC Tested
DESCRIPTION
The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40
GHz and suitable for low noise and medium power amplifier applications including a wide range of
commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond
pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
NF
Noise Figure at V
DS
= 4 V, I
DS
= 50 mA,
f
= 12GHz
G
a
Associated Gain at V
DS
= 4 V, I
DS
= 50 mA,
f
= 12GHz
P
1dB
Output Power at 1dB Gain Compression Point ,
f
= 12GHz
V
DS
= 6 V, I
DS
= 80 mA
G
L
Linear Power Gain,
f
= 12GHz
V
DS
= 6 V, I
DS
= 80 mA
I
DSS
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
g
m
Transconductance at V
DS
= 2 V, V
GS
= 0 V
V
P
Pinch-off Voltage at V
DS
= 2 V, I
D
= 1.2 mA
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
=0.3 mA
R
th
Thermal Resistance
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
CONDITIONS
MIN
9
10
TYP
0.8
10
24
11
MAX
1.0
UNIT
dB
dB
dBm
dB
180
200
-1.0*
12
22
mA
mS
Volts
Volts
°
C/W
9
PHOTO ENLARGEMENT
* For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement
(1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC1301A | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:Dual LDO with Microcontroller RESET Function |
| TC1301A_08 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:Dual LDO with Microcontroller RESET Function |
| TC1301A-AAAVMF | 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| TC1301A-AAAVMFTR | 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| TC1301A-AAAVUA | 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
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