參數(shù)資料
型號(hào)： TC1300
廠商： Microchip Technology Inc.
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： 300 mA CMOS LDO with Shutdown, Bypass and Independent Delayed Reset Function
中文描述： 300毫安的CMOS低壓降穩(wěn)壓器，帶有關(guān)斷，繞道和獨(dú)立延遲復(fù)位功能
文件頁(yè)數(shù)： 3/16頁(yè)
文件大小： 326K
代理商： TC1300
2002 Microchip Technology Inc.
DS21385C-page 3
TC1300
Dropout Voltage
(Note 4)
V
IN –
V
OUT
—
1
70
210
30
130
390
mV
I
L
= 0.1 mA
I
L
= 100 mA
I
L
= 300 mA
Supply Current
I
SS1
—
80
160
μA
SHDN = V
IH
Shutdown Supply Current
I
SS2
—
30
60
μA
SHDN = 0V
Power Supply Rejection Ratio
PSRR
—
60
—
dB
f
≤
1 kHz, C
BYPASS
= 1 nF
Output Short Circuit Current
I
OUTSC
V
OUT
/
P
D
—
800
1200
mA
V
OUT
= 0V
Thermal Regulation
—
0.04
—
%/W
Note 5
Output Noise
eN
—
900
—
nV/Hz
f < 1 kHz, C
OUT
= 1 μF,
R
LOAD
= 50
,
C
BYPASS
= 1 nF
Wake-Up Time
(from Shutdown Mode)
t
WK
—
10
20
μsec
C
IN
= 1 μF, V
IN
= 5V,
C
OUT
= 4.7 μF, I
L
= 30 mA,
See Figure 3-2
Settling Time
(from Shutdown Mode)
ts
—
50
—
μsec
C
IN
= 1 μF, V
IN
= 5V
C
OUT
= 4.7 μF
I
L
= 30 mA, See Figure 3-2
Thermal Shutdown Die
Temperature
T
SD
—
150
—
°C
Thermal Shutdown Hysteresis
T
HYS
—
10
—
°C
Thermal Resistance Junction to
Case
RthetaJA
—
200
—
°C/Watt EIA/JEDEC JESD51-751-7 4-
Layer Board
SHDN Input High Threshold
V
IH
45
—
—
%V
IN
V
IN
= 2.5V to 6.0V
SHDN Input Low Threshold
V
IL
—
—
15
%V
IN
V
IN
= 2.5V to 6.0V
ELECTRICAL CHARACTERISTICS (CONTINUED)
V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3 μF, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
BOLDFACE
type specifications apply
for junction temperature
(Note 8)
of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note
1:
V
R
is the regulator output voltage setting.
2:
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see
Section 4.0,
“Thermal Considerations”, of this data
sheet for more details.
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
(V
R
+ V
DROPOUT
).
The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
4:
5:
6:
7:
8:
TCVOUT
-VOUTMAX
VOUTMIN
VOUT
–
(
)
106
×
T
×
=
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