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參數(shù)資料
| 型號： | STGB20NB32LZ-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH⑩ IGBT |
| 中文描述： | N通道鉗位20A條- D2PAK/I2PAK內(nèi)部鉗位PowerMESH⑩IGBT的 |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 462K |
| 代理商： | STGB20NB32LZ-1 |
11/11
STGB20NB32LZ - STGB20NB32LZ-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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| STGB7NB60HDT4 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:25V; Capacitance:110pF RoHS Compliant: No |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGB20NB32LZT4 | 功能描述:IGBT 晶體管 N-Ch Clamped 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB20NB37LZ | 功能描述:IGBT 晶體管 N-Channel 20 Amp IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB20NB37LZ_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT |
| STGB20NB37LZT4 | 功能描述:IGBT 晶體管 N-Ch Clamped 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB20NB41LZ | 制造商:STMicroelectronics 功能描述: |
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