參數資料
型號: ST7PLITE15F1B6
廠商: 意法半導體
英文描述: 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 4 TIMERS, SPI
中文描述: 8位單電壓閃存存儲器,數據EEPROM,模數轉換器,4定時器,微控制器的SPI
文件頁數: 115/131頁
文件大小: 2046K
代理商: ST7PLITE15F1B6
ST7LITE1
115/131
ADC CHARACTERISTICS
(Cont’d)
ADC Accuracy with V
DD
=5.0V
Notes:
1)
Data based on characterization results over the whole temperature range, monitored in production.
2)
Injecting negative current on any of the analog input pins significantly reduces the accuracy of any conversion being
performed on any analog input.
Analog pins can be protected against negative injection by adding
a Schottky diode (pin to ground).
Injecting negative
current on digital input
pins
degrades ADC accuracy especially if performed on a pin close to the analog input pins.
Any positive injection current within the limits specified for I
INJ(PIN)
and
Σ
I
INJ(PIN)
in
Section 13.8
does not affect the ADC
accuracy.
Figure 88. ADC Accuracy Characteristics with amplifier disabled
Symbol
|
E
T
|
|
E
O
|
|
E
G
|
|
E
D
|
|
E
L
|
Parameter
Conditions
Typ
3
1.5
2
2.5
2.5
Max
6
5
4.5
4.5
4.5
Unit
Total unadjusted error
2)
Offset error
2)
Gain Error
2)
Differential linearity error
2)
Integral linearity error
2)
f
CPU
=8MHz, f
ADC
=4MHz
1)
,
V
DD
=5.0V
LSB
E
O
E
G
1 LSB
IDEAL
1LSBIDEAL
VDD
VSS
1024
=
V
in
(LSB
IDEAL
)
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
E
=Offset Error: deviation between the first actual
transition and the first ideal one.
E
=Gain Error: deviation between the last ideal
transition and the last actual one.
E
=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
E
=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
Digital Result ADCDR
1023
1022
1021
5
4
3
2
1
0
7
6
1
2
3
4
5
6
7
1021 10221023 1024
(1)
(2)
E
T
E
D
E
L
(3)
V
DD
V
SS
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