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參數(shù)資料
| 型號： | ST62E35B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER, 16-BIT AUTO-RELOAD TIMER, EEPROM, SPI AND UART |
| 中文描述： | 8位檢察官辦公室/存儲器與阿微控制器/ D轉(zhuǎn)換器，16位自動重加載定時(shí)器，EEPROM中，SPI和UART |
| 文件頁數(shù)： | 67/82頁 |
| 文件大小： | 617K |
| 代理商： | ST62E35B |
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ST62T35B/E35B
6 ELECTRICAL CHARACTERISTICS
6.1 ABSOLUTE MAXIMUM RATINGS
This product contains devices to protect the inputs
against damage due to high static voltages, how-
ever it is advisable to take normal precaution to
avoid application of any voltage higher than the
specified maximum rated voltages.
For proper operation it is recommended that V
I
and V
O
be higher than V
SS
and lower than V
DD
.
Reliability is enhanced if unused inputs are con-
nected to an appropriate logic voltage level (V
DD
or V
SS
).
Power Considerations
.The average chip-junc-
tion temperature, Tj, in Celsius can be obtained
from:
Tj=TA + PD x RthJA
Where:TA = Ambient Temperature.
RthJA =Package thermal resistance(junc-
tion-to ambient).
PD = Pint + Pport.
Pint =IDD x VDD (chip internal power).
Pport =Port power dissipation(determined
by the user).
Notes:
-
Stresses above those listedas “absolute maximum ratings” may cause permanent damage tothe device. Thisis astress rating only and
functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
- (1) Within these limits, clamping diodes are guarantee tobe not conductive. Voltages outside these limits are authorised as long as injection
current is kept withinthe specification.
Symbol
V
DD
V
I
V
O
I
O
IV
DD
IV
SS
Tj
T
STG
Parameter
Value
-0.3 to 7.0
Unit
V
V
V
mA
mA
mA
°
C
°
C
Supply Voltage
Input Voltage
Output Voltage
Current Drain per Pin Excluding V
DD
, V
SS
Total Current into V
DD
(source)
Total Current out of V
SS
(sink)
Junction Temperature
Storage Temperature
V
SS
- 0.3 to V
DD
+ 0.3
(1)
V
SS
- 0.3 to V
DD
+ 0.3
(1)
±
10
50
50
150
-60 to 150
66
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