參數(shù)資料
型號： SST85LD0512-60-RI-LBTE
元件分類： 存儲控制器/管理單元
英文描述： IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
封裝： 12 X 24 MM, ROHS COMPLIANT, MO-210, LBGA-91
文件頁數(shù)： 33/36頁
文件大小： 913K
代理商： SST85LD0512-60-RI-LBTE
2009 Silicon Storage Technology, Inc.
S71382-04-000
10/09
6
512 MByte / 1 GByte / 2 GByte NANDrive
SST85LD0512 / SST85LD1001T / SST85LD1002U
Data Sheet
Table 1: Pin Assignments (1 of 3)
Symbol
Pin No.
Pin
Type
I/O
Type
Name and Functions
91-TFBGA
Host Side Interface
A2
K8
I
I1Z
A[2:0] are used to select one of eight registers in the Task File.
A1
K3
A0
L2
D15
H8
I/O
I1Z/O2 D[15:0] Data bus
D14
G9
D13
G8
D12
H7
D11
F9
D10
F8
D9
E8
D8
F7
D7
F4
D6
H4
D5
E3
D4
H3
D3
F3
D2
G3
D1
F2
D0
G2
DMACK#
K2
I
I2U
DMA Acknowledge - input from host
DMARQ
J3
O
O1
DMA Request to host
CS1FX#
L3
II2Z
CS1FX# is the chip select for the task file registers
CS3FX#
L8
CS3FX# is used to select the alternate status register and the Device
Control register.
CSEL
L9
I
I1U
This internally pulled-up signal is used to configure this device as a
Master or a Slave. When this pin is grounded, this device is configured
as a Master. When the pin is open, this device is configured as a
Slave. The pin setting should remain the same from Power-on to
Power-down.
IORD#
H2
I
I2Z
IORD#: This is an I/O Read Strobe generated by the host. When Ultra
DMA mode is not active, this signal gates I/O data from the device.
HDMARDY#: In Ultra DMA mode when DMA Read is active, this sig-
nal is asserted by the host to indicate that the host is ready to receive
Ultra DMA data-in bursts. The host may negate HDMARDY# to pause
an Ultra DMA transfer.
HSTROBE: When DMA Write is active, this signal is the data-out
strobe generated by the host. Both the rising and falling edges of
HSTROBE cause data to be latched by the device. The host may stop
generating HSTROBE edges to pause an Ultra DMA data-out burst.
相關(guān)PDF資料
PDF描述
SST85LD1001T-60-RI-LBTE IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST85LD0512-60-RI-LBTE-TM023 功能描述:閃存 512M NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST85LD0512T-120-5C-LBZE 功能描述:閃存 512M NAND 120ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST85LD1001K-60-4C-LBTE 功能描述:閃存 1G NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST85LD1001K-60-PC-LBTE 功能描述:閃存 1GB NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST85LD1001T-60-5I-LBTE 功能描述:閃存 1G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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