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參數(shù)資料
| 型號： | SPN04N60S5 |
| 廠商： | SIEMENS AG |
| 英文描述： | Cool MOS Small-Signal-Transistor(Cool MOS 小信號晶體管) |
| 中文描述： | 酷馬鞍山小信號晶體管（酷馬鞍山小信號晶體管） |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 76K |
| 代理商： | SPN04N60S5 |
1999-10-11
4
SPN04N60S5
Preliminary data
Electrical Characteristics
Parameter
at T
= 25 °C, unless otherwise specified
Gate Charge Characteristics
Gate to source charge
V
DD
= 350 V,
I
D
= 0.8 A
Gate to drain charge
V
DD
= 350 V,
I
D
= 0.8 A
Total gate charge
V
DD
= 350 V,
I
D
= 0.8 A,
V
GS
= 0 to 10 V
Symbol
Values
typ.
Unit
min.
max.
Q
gs
-
4.1
-
nC
Q
gd
-
9.2
-
Q
g
-
17
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.8 A
Reverse recovery time
V
R
= 350 V,
I
F
=
I
S
,
di
F
/dt
= 100 A/μs
Reverse recovery charge
V
R
= 350 V,
I
F=
l
S
,
di
F
/dt
= 100 A/μs
I
S
-
-
0.8
A
I
SM
-
-
3
V
SD
-
0.85
1.05
V
t
rr
-
200
-
ns
Q
rr
-
1.2
-
μC
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