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參數(shù)資料
| 型號(hào)： | SPN04N60S5 |
| 廠商： | SIEMENS AG |
| 英文描述： | Cool MOS Small-Signal-Transistor(Cool MOS 小信號(hào)晶體管) |
| 中文描述： | 酷馬鞍山小信號(hào)晶體管（酷馬鞍山小信號(hào)晶體管） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | SPN04N60S5 |
1999-10-11
1
SPN04N60S5
Preliminary data
Cool MOS
Small-Signal-Transistor
New revolutionary high voltage technology
Worldwide best R
DS(on)
in SOT 223
Ultra low gate charge
Extreme dvdt rated
Optimized capacitances
Improved noise immunity
G,1
D,2/4
S,3
VPS05163
1
2
3
4
C
O L
MOS
Type
SPN04N60S5 600 V
V
DS
I
D
0.8 A
R
DS(on)
0.95
Package
SOT-223
Marking
04N60S5
Ordering Code
Q67040-S4211
Maximum Ratings
, at T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current,
t
p
= 1ms
1)
T
A
= 25 °C
Reverse diode dvdt
I
S
= 0.8 A,
V
DS
<
V
DSS
,
didt
= 100 A/μs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
T
A
= 25 °C
Operating and storage temperature
Symbol
I
D
Value
0.8
0.65
3
Unit
A
I
D puls
dvdt
6
kV/μs
V
GS
P
tot
±
20
1.8
V
W
T
j ,
T
stg
-55... +150
°C
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