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參數(shù)資料
| 型號(hào)： | SKW10N60 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 快速的S - IGBT的不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管（不擴(kuò)散技術(shù)中的快速第S - IGBT技術(shù)） |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大小： | 296K |
| 代理商： | SKW10N60 |
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SKP10N60
SKB10N60, SKW10N60
9
Mar-00
t
r
,
R
100A/
μ
s 300A/
μ
s 500A/
μ
s 700A/
μ
s 900A/
μ
s
0ns
100ns
200ns
300ns
400ns
500ns
I
F
= 5A
I
F
= 10A
I
F
= 20A
Q
r
,
R
100A/
μ
s 300A/
μ
s 500A/
μ
s 700A/
μ
s 900A/
μ
s
0nC
200nC
400nC
600nC
800nC
1000nC
1200nC
1400nC
I
F
= 5A
I
F
= 10A
I
F
= 20A
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C)
I
r
,
R
100A/
μ
s 300A/
μ
s 500A/
μ
s 700A/
μ
s 900A/
μ
s
0A
4A
8A
12A
16A
20A
I
F
= 5A
I
F
= 20A
I
F
= 10A
d
r
/
,
D
O
100A/
μ
s
300A/
μ
s
500A/
μ
s
700A/
μ
s
900A/
μ
s
0A/
μ
s
200A/
μ
s
400A/
μ
s
600A/
μ
s
800A/
μ
s
1000A/
μ
s
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(
V
R
= 200V,
T
j
= 125
°
C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| skb15n60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| SKP15N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| SKW15N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| skw20n60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| skw30n60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKW10N60A | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SK-W11-21C-1/2 | 制造商:ITT Interconnect Solutions 功能描述:SK-W11-21C-1/2 - Bulk |
| SK-W11-21C-3/4 | 制造商:ITT Interconnect Solutions 功能描述:SK-W11-21C-3/4 - Bulk |
| SK-W11-21C-5/8 | 制造商:ITT Interconnect Solutions 功能描述:SK-W11-21C-5/8 - Bulk |
| SK-W11-22C-1/2 | 制造商:ITT Interconnect Solutions 功能描述:SK-W11-22C-1/2 - Bulk |
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