參數(shù)資料
型號(hào)： SKP15N60
廠商： SIEMENS AG
英文描述： Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT)
中文描述： 快速的S - IGBT的不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管（不擴(kuò)散技術(shù)中的快速第S - IGBT技術(shù)）
文件頁(yè)數(shù)： 3/14頁(yè)
文件大小： 301K
代理商： SKP15N60
SKP15N60
SKB15N60, SKW15N60
3
Mar-00
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
32
23
234
46
0.30
0.27
0.57
38
28
281
55
0.36
0.35
0.71
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
=21
,
Energy losses include
“tail” and diode
reverse recovery.
mJ
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
-
-
279
28
254
390
5.0
180
-
-
-
-
-
-
ns
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
nC
A
A/
μ
s
T
j
=25
°
C,
V
R
=200V,
I
F
=15A,
di
F
/dt
=200A/
μ
s
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
31
23
261
54
0.45
0.41
0.86
38
28
313
65
0.54
0.53
1.07
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
=21
Energy losses include
“tail” and diode
reverse recovery.
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
-
-
360
40
320
1020
7.5
200
-
-
-
-
-
-
ns
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
nC
A
A/
μ
s
T
j
=150
°
C
V
R
=200V,
I
F
=15A,
di
F
/dt
=200A/
μ
s
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