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參數(shù)資料
| 型號： | SKP15N60 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術中的快速 S-IGBT) |
| 中文描述： | 快速的S - IGBT的不擴散核武器條約與軟，恢復快反平行快恢復二極管（不擴散技術中的快速第S - IGBT技術） |
| 文件頁數(shù)： | 2/14頁 |
| 文件大小： | 301K |
| 代理商： | SKP15N60 |
SKP15N60
SKB15N60, SKW15N60
2
Mar-00
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
R
thJC
0.9
R
thJCD
1.7
R
thJA
TO-220AB
TO-247AC
TO-263AB
62
40
40
R
thJA
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=15A
T
j
=25
°
C
T
j
=150
°
C
V
GE
=0V,
I
F
=15A
T
j
=25
°
C
T
j
=150
°
C
I
C
=400
μ
A,
V
CE
=
V
GE
V
CE
=600V,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=15A
600
-
-
Collector-emitter saturation voltage
1.7
-
2
2.3
2.4
2.8
Diode forward voltage
V
F
1.2
-
1.4
1.25
1.8
1.65
Gate-emitter threshold voltage
V
GE(th)
I
CES
3
4
5
V
Zero gate voltage collector current
-
-
-
-
40
2000
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
3
-
100
-
nA
S
10.9
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
800
84
52
76
960
101
62
99
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=15A
V
GE
=15V
TO-220AB
TO-247AC
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
≤
600V,
T
j
≤
150
°
C
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
L
E
-
-
-
7
13
150
-
-
-
nH
I
C(SC)
A
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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