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參數(shù)資料
| 型號： | SI4955DY-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs |
| 中文描述： | 非對稱雙P溝道30-V/20-V（副）的MOSFET |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 137K |
| 代理商： | SI4955DY-T1-E3 |
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Document Number: 91000
Revision: 08-Apr-05
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si4963BDY-T1 | Dual P-Channel 2.5-V (G-S) MOSFET |
| SI4967DY | Dual P-Channel 1.8-V (G-S) MOSFET |
| SI4967DY-T1 | Dual P-Channel 1.8-V (G-S) MOSFET |
| SI4973DY-T1 | Dual P-Channel 25-V (G-S) MOSFET |
| SI4982DY | Dual N-Channel 100-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4963BDY | 制造商:Vishay Siliconix 功能描述:MOSFET DUAL PP SO-8 |
| SI4963BDY_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 2.5-V (G-S) MOSFET |
| SI4963BDY-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 2.5-V (G-S) MOSFET |
| SI4963BDY-T1-E3 | 功能描述:MOSFET 20V 6.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4963BDY-T1-GE3 | 功能描述:MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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