參數(shù)資料
型號: SI4955DY-T1-E3
廠商: Vishay Intertechnology,Inc.
英文描述: Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
中文描述: 非對稱雙P溝道30-V/20-V(副)的MOSFET
文件頁數(shù): 6/9頁
文件大?。?/td> 137K
代理商: SI4955DY-T1-E3
www.vishay.com
6
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
Vishay Siliconix
Si4955DY
CHANNEL 2 TYPICAL CHARACTERISTICS
25 °C unless noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
4
8
12
16
20
0
1
2
3
4
5
V
GS
= 5 thru 2 V
V
DS
- Drain-to-Source Voltage (V)
-
I
D
1 V
1.5 V
-
Ω
)
r
D
0.00
0.02
0.04
0.06
0.08
0.10
0
4
8
12
16
20
I
D
- Drain Current (A)
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
0
1
2
3
4
5
0
4
8
12
16
20
24
V
DS
= 10 V
I
D
= 7 A
-
Q
g
- Total Gate Charge (nC)
V
G
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0
0.4
0.8
1.2
1.6
2.0
T
C
= 125
°
C
- 55
°
C
25
°
C
V
GS
- Gate-to-Source Voltage (V)
-
I
D
0
500
1000
1500
2000
2500
3000
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
V
GS
= 4.5 V
I
D
= 7 A
T
J
- Junction Temperature (
°
C)
(
-
r
D
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