參數(shù)資料
型號: SI3586DV
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 20-V (D-S) MOSFET,Low-Threshold
中文描述: P通道20V(D-S)MOSFET 低閾值
文件頁數(shù): 8/8頁
文件大?。?/td> 88K
代理商: SI3586DV
Si3586DV
Vishay Siliconix
New Product
www.vishay.com
8
Document Number: 72310
S-32412—Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
PCHANNEL
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N
T
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
2
1
0.1
0.01
10
3
10
2
1
10
600
10
1
10
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130 C/W
3. T
JM
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
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SI3586DV-T1-E3 功能描述:MOSFET N&P-CH 20V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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