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參數(shù)資料
| 型號： | SI3586DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 88K |
| 代理商： | SI3586DV |
Si3586DV
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72310
S-32412—Rev. B, 24-Nov-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.40
1.1
V
V
DS
= V
GS
, I
D
=
250 A
P-Ch
0.40
1.1
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
N-Ch
100
nA
V
DS
= 0 V, V
GS
=
8 V
P-Ch
100
V
DS
= 16 V, V
GS
= 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
16 V, V
GS
= 0 V
P-Ch
1
A
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 C
N-Ch
10
V
DS
=
16 V, V
GS
= 0 V, T
J
= 85 C
P-Ch
10
On State Drain Current
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
N-Ch
5
A
V
DS
5 V, V
GS
=
4.5 V
P-Ch
5
V
GS
= 4.5 V, I
D
= 3.4 A
N-Ch
0.047
0.060
V
GS
=
4.5 V, I
D
=
2.5 A
P-Ch
0.086
0.110
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 3.2 A
N-Ch
0.054
0.070
V
GS
=
2.5 V, I
D
=
2.0 A
P-Ch
0.116
0.145
V
GS
=
1.8 V, I
D
=
2.5 A
N-Ch
0.075
0.100
V
GS
=
1.8 V, I
D
=
1.0 A
P-Ch
0.170
0.220
Forward Transconductance
a
g
fs
V
DS
= 5 V, I
D
= 3.4 A
N-Ch
13
S
V
DS
=
5 V, I
D
=
2.5 A
P-Ch
6
Diode Forward Voltage
a
V
SD
I
S
= 1.05 A, V
GS
= 0 V
N-Ch
0.8
1.1
V
I
S
=
1.05 A, V
GS
= 0 V
P-Ch
0.8
1.1
Dynamic
b
Total Gate Charge
Q
g
N-Ch
4.1
6.0
N-Channel
P-Ch
5
7.5
Gate Source Charge
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 3.4 A
N-Ch
0.65
nC
P-Channel
4 5 V I 2 5 A
V
DS
=
10 V,
GS
=
4.5 V, I
=
2.5 A
10 V
V
P-Ch
0.68
Gate Drain Charge
Gate-Drain Charge
Q
gd
N-Ch
0.8
P-Ch
1.3
Gate Resistance
R
g
N-Ch
2.6
P-Ch
9.8
Turn On Delay Time
Turn-On Delay Time
t
d(on)
N-Ch
30
45
P-Ch
28
45
Rise Time
t
r
N-hannel
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
N-Ch
52
85
I
D
P-Ch
55
85
Turn Off Delay Time
Turn-Off Delay Time
d( ff)
t
d(off)
P-Channel
10 V R 10
=
10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
V
N-Ch
25
40
ns
I
D
P-Ch
55
85
Fall Time
t
f
N-Ch
20
30
P-Ch
32
50
Source-Drain
Reverse Recovery Time
t
rr
I
F
= 1.05 A, di/dt = 100 A/ s
N-Ch
25
40
I
F
=
1.05 A, di/dt = 100 A/ s
P-Ch
25
40
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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