參數(shù)資料
型號: SI3586DV
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 20-V (D-S) MOSFET,Low-Threshold
中文描述: P通道20V(D-S)MOSFET 低閾值
文件頁數(shù): 6/8頁
文件大?。?/td> 88K
代理商: SI3586DV
Si3586DV
Vishay Siliconix
New Product
www.vishay.com
6
Document Number: 72310
S-32412—Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
PCHANNEL
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
0.00
0.15
0.30
0.45
0.60
0.75
0
1
2
3
4
5
6
7
8
0
130
260
390
520
650
0
4
8
12
16
20
0
1
2
3
4
5
6
7
8
0.0
0.5
1.0
1.5
2.0
2.5
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
I
V
GS
Gate-to-Source Voltage (V)
I
V
DS
Drain-to-Source Voltage (V)
C
r
)
I
D
Drain Current (A)
Capacitance
V
GS
= 5 thru 2.5 V
2 V
T
C
=
55 C
125 C
V
GS
= 1.8 V
V
GS
= 4.5 V
C
oss
C
iss
1.5 V
25 C
V
GS
= 2.5 V
C
rss
0.0
1.3
2.6
3.9
5.2
6.5
0
1
2
3
4
5
6
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
Gate Charge
V
Q
g
Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.5 A
T
J
Junction Temperature ( C)
(
r
)
V
DS
= 10 V
I
D
= 2.5 A
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