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參數(shù)資料
| 型號(hào)： | SGW5N60RUFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | CO-PAK IGBT(CO-PAK型絕緣柵雙極晶體管) |
| 中文描述： | 8 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 370K |
| 代理商： | SGW5N60RUFD |
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or
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failure to perform when properly used in accordance
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reasonably expected to result in significant injury to the
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without
notice.
This datasheet contains preliminary data, and supplementary data
will be published at a later data.
Fairchild Semiconductor reserves the right to make changes at any
time without notices in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice in
order to improve design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Obsolete
Not In Production
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SGW5N60RUF | Short Circuit Rated IGBT(額定短路電流絕緣柵雙極晶體管) |
| SH123 | Voltage Regulator |
| SH223 | Voltage Regulator |
| SH123SM | Voltage Regulator |
| SH223SV | Voltage Regulator |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGW5N60RUFDTM | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW5N60RUFTM | 功能描述:IGBT 晶體管 600V/5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW6N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGW6N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGW6N60UFDTM | 功能描述:IGBT 晶體管 600V/3A/W/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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