參數(shù)資料
型號(hào): SGD06N60
廠商: INFINEON TECHNOLOGIES AG
英文描述: Fast IGBT in NPT-technology
中文描述: 在不擴(kuò)散核武器條約快速IGBT技術(shù)
文件頁數(shù): 8/12頁
文件大?。?/td> 396K
代理商: SGD06N60
SGP06N60,
SGD06N60,
SGB06N60
SGU06N60
8
Jul-02
V
G
,
G
-
E
0nC
15nC
Q
GE
,
GATE CHARGE
30nC
45nC
0V
5V
10V
15V
20V
25V
480V
120V
C
,
C
0V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
10V
20V
30V
10pF
100pF
1nF
C
rss
C
oss
C
iss
Figure 17. Typical gate charge
(
I
C
= 6A)
t
s
,
S
10V
11V
12V
13V
14V
15V
0
μ
s
5
μ
s
10
μ
s
15
μ
s
20
μ
s
25
μ
s
I
C
,
S
10V
12V
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(
V
CE
600V,
T
j
= 150
°
C)
14V
16V
18V
20V
0A
20A
40A
60A
80A
100A
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
= 600V, start at
T
j
= 25
°
C)
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