參數(shù)資料
型號: SGD06N60
廠商: INFINEON TECHNOLOGIES AG
英文描述: Fast IGBT in NPT-technology
中文描述: 在不擴散核武器條約快速IGBT技術(shù)
文件頁數(shù): 6/12頁
文件大?。?/td> 396K
代理商: SGD06N60
SGP06N60,
SGD06N60,
SGB06N60
SGU06N60
6
Jul-02
t
,
S
0A
3A
6A
9A
12A
15A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
0
50
100
150
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 50
,
Dynamic test circuit in Figure E)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 6A,
Dynamic test circuit in Figure E)
t
,
S
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 6A,
R
G
= 50
,
Dynamic test circuit in Figure E)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.25mA)
相關PDF資料
PDF描述
SGP06N60 Fast IGBT in NPT-technology
SGU06N60 HEATSINK TO-3 PWR 12W BLK
SGB15N120 Fast IGBT in NPT-technology
SGP15N120 Fast IGBT in NPT-technology
SGW15N120 Fast IGBT in NPT-technology
相關代理商/技術(shù)參數(shù)
參數(shù)描述
SGD06N60BUMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 12A 68W TO252-3
SGD100 制造商:Cooper Wiring Devices 功能描述:
SGD-100 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:C to X Band, Mixer, Modulator Applications
SGD-100T 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:C to X Band, Mixer, Modulator Applications
SGD102 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:C to X Band, Mixer, Modulator Applications