參數(shù)資料
型號(hào)： SGD06N60
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast IGBT in NPT-technology
中文描述： 在不擴(kuò)散核武器條約快速IGBT技術(shù)
文件頁數(shù)： 3/12頁
文件大小： 396K
代理商： SGD06N60
SGP06N60,
SGD06N60,
SGB06N60
SGU06N60
3
Jul-02
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
25
18
220
54
0.110
0.105
0.215
30
22
264
65
0.127
0.137
0.263
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=6A,
V
GE
=0/15V,
R
G
=50
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=250pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
24
17
248
70
0.167
0.153
0.320
29
20
298
84
0.192
0.199
0.391
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=6A,
V
GE
=0/15V,
R
G
=50
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=250pF
mJ
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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