參數(shù)資料
型號(hào)： SGD06N60
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast IGBT in NPT-technology
中文描述： 在不擴(kuò)散核武器條約快速I(mǎi)GBT技術(shù)
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 396K
代理商： SGD06N60
SGP06N60,
SGD06N60,
SGB06N60
SGU06N60
7
Jul-02
E
,
S
0A
3A
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 50
,
Dynamic test circuit in Figure E)
6A
9A
12A
15A
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
E
on
*
E
off
E
ts
*
E
,
S
0
50
R
G
,
GATE RESISTOR
100
150
0.0mJ
0.2mJ
0.4mJ
0.6mJ
E
ts
*
E
on
*
E
off
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 6A,
Dynamic test circuit in Figure E)
E
,
S
0°C
50°C
100°C
150°C
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
t
p
,
PULSE WIDTH
1ms
10ms 100ms
1s
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 6A,
R
G
= 50
,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.705
0.561
0.583
τ
,
(s)
0.0341
3.74E-3
3.25E-4
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