參數(shù)資料
型號： S29GL256M10TFIR10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2?3?; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù)： 35/160頁
文件大小： 2142K
代理商： S29GL256M10TFIR10
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
35
P r e l i m i n a r y
SA45
1
0
1
1
0
1
64/32
2D0000–2DFFFF
168000–16FFFF
SA46
1
0
1
1
1
0
64/32
2E0000–2EFFFF
170000–177FFF
SA47
1
0
1
1
1
1
64/32
2F0000–2FFFFF
178000–17FFFF
SA48
1
1
0
0
0
0
64/32
300000–30FFFF
180000–187FFF
SA49
1
1
0
0
0
1
64/32
310000–31FFFF
188000–18FFFF
SA50
1
1
0
0
1
0
64/32
320000–32FFFF
190000–197FFF
SA51
1
1
0
0
1
1
64/32
330000–33FFFF
198000–19FFFF
SA52
1
1
0
1
0
0
64/32
340000–34FFFF
1A0000–1A7FFF
SA53
1
1
0
1
0
1
64/32
350000–35FFFF
1A8000–1AFFFF
SA54
1
1
0
1
1
0
64/32
360000–36FFFF
1B0000–1B7FFF
SA55
1
1
0
1
1
1
64/32
370000–37FFFF
1B8000–1BFFFF
SA56
1
1
1
0
0
0
64/32
380000–38FFFF
1C0000–1C7FFF
SA57
1
1
1
0
0
1
64/32
390000–39FFFF
1C8000–1CFFFF
SA58
1
1
1
0
1
0
64/32
3A0000–3AFFFF
1D0000–1D7FFF
SA59
1
1
1
0
1
1
64/32
3B0000–3BFFFF
1D8000–1DFFFF
SA60
1
1
1
1
0
0
64/32
3C0000–3CFFFF
1E0000–1E7FFF
SA61
1
1
1
1
0
1
64/32
3D0000–3DFFFF
1E8000–1EFFFF
SA62
1
1
1
1
1
0
64/32
3E0000–3EFFFF
1F0000–1F7FFF
SA63
1
1
1
1
1
1
64/32
3F0000–3FFFFF
1F8000–1FFFFF
Table 3. S29GL032M (Models R1, R2) Sector Address Table (Continued)
Sector
A20-A15
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
相關(guān)PDF資料
PDF描述
S29GL256M10TFIR12 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2/3; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256M11FAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FAIR12 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, FBGA64 IND - Trays
S29GL256M11FAIR2 制造商:Spansion 功能描述:NOR Flash, 16M x 16, 64 Pin, Plastic, BGA
S29GL256M11FAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FFIR10 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:Flash Memory IC
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