參數(shù)資料
型號： S29GL256M10TFIR10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2?3?; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù)： 12/160頁
文件大?。?/td> 2142K
代理商： S29GL256M10TFIR10
12
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Connection Diagrams
Notes:
1. Ball C5 is NC on S29GL032M.
2. Ball B8 is NC on S29GL064M and S29GL032M.
3. Ball C8 is NC on S29GL128M, S29GL064M and S29GL032M.
4. Ball D8 and Ball F1 are NC on S29GL064M (models R3, R4).
5. Ball F7 is NC on S29GL064M (model R5).
Special Package Handling Instructions
Special handling is required for Flash Memory products in moulded packages (TSOP and BGA). The
package and/or data integrity may be compromised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
A2
C2
D2
E2
F2
G2
H2
V
SS
A3
C3
D3
E3
F3
G3
H3
A4
C4
D4
E4
F4
G4
H4
A5
C5
D5
E5
F5
G5
V
CC
H5
A6
C6
D6
E6
F6
G6
H6
A7
C7
D7
E7
F7
G7
H7
DQ15/A-1
V
SS
BYTE#
5
A16
A15
A14
A12
A13
DQ13
DQ6
DQ14
DQ7
A11
A10
A8
A9
DQ4
DQ12
DQ5
A19
A21
1
RESET#
WE#
DQ11
DQ3
DQ10
DQ2
A20
A18
WP#/ACC
RY/BY#
DQ9
DQ1
DQ8
DQ0
A5
A6
A17
A7
OE#
CE#
A0
A1
A2
A4
A3
A1
C1
D1
E1
F1
V
IO4
G1
H1
NC
NC
NC
NC
NC
NC
NC
A8
C8
B2
B3
B4
B5
B6
B7
B1
B8
D8
E8
F8
G8
H8
NC
NC
NC
V
SS
V
IO4
A23
3
A22
2
NC
64-ball Fortified BGA
Top View, Balls Facing Down
相關(guān)PDF資料
PDF描述
S29GL256M10TFIR12 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2/3; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256M11FAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FAIR12 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, FBGA64 IND - Trays
S29GL256M11FAIR2 制造商:Spansion 功能描述:NOR Flash, 16M x 16, 64 Pin, Plastic, BGA
S29GL256M11FAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FFIR10 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:Flash Memory IC
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