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參數(shù)資料
| 型號： | S29GL01GP12FACR13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1G X 1 FLASH 3V PROM, 120 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 21/80頁 |
| 文件大小： | 2706K |
| 代理商： | S29GL01GP12FACR13 |
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28
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
Software Functions and Sample Code
Notes
1. Base = Base Address.
2. Last = Last cycle of write buffer program operation; depending on number of words written, the total number of cycles may be from 6 to
37.
3. For maximum efficiency, it is recommended that the write buffer be loaded with the highest number of words (N words) possible.
The following is a C source code example of using the write buffer program function. Refer to the Spansion
Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Write Buffer Programming Command
*/
/* NOTES: Write buffer programming limited to 16 words. */
/*
All addresses to be written to the flash in
*/
/*
one operation must be within the same flash
*/
/*
page. A flash page begins at addresses
*/
/*
evenly divisible by 0x20.
*/
UINT16 *src = source_of_data;
/* address of source data
*/
UINT16 *dst = destination_of_data;
/* flash destination address
*/
UINT16 wc
= words_to_program -1;
/* word count (minus 1)
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
/* write unlock cycle 1
*/
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
/* write unlock cycle 2
*/
*( (UINT16 *)sector_address )
= 0x0025;
/* write write buffer load command */
*( (UINT16 *)sector_address )
= wc;
/* write word count (minus 1)
*/
for (i=0;i<=wc;i++)
{
*dst++ = *src++; /* ALL dst MUST BE in same Write Buffer */
}
*( (UINT16 *)sector_address )
= 0x0029;
/* write confirm command
*/
/* poll for completion */
/* Example: Write Buffer Abort Reset */
*( (UINT16 *)addr + 0x555 ) = 0x00AA;
/* write unlock cycle 1
*/
*( (UINT16 *)addr + 0x2AA ) = 0x0055;
/* write unlock cycle 2
*/
*( (UINT16 *)addr + 0x555 ) = 0x00F0;
/* write buffer abort reset
*/
Table 7.7 Write Buffer Program
(LLD Functions Used = lld_WriteToBufferCmd, lld_ProgramBufferToFlashCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 555h
Base + 2AAh
0055h
3
Write Buffer Load Command
Write
Sector Address
0025h
4
Write Word Count
Write
Sector Address
Word Count (N–1)h
Number of words (N) loaded into the write buffer can be from 1 to 32 words (1 to 64 bytes).
5 to 36
Load Buffer Word N
Write
Program Address, Word N
Word N
Last
Write Buffer to Flash
Write
Sector Address
0029h
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP12FAI010 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1GBIT 128MX8/64MX16 120NS 64BGA - Trays |
| S29GL01GP12FAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12FAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12FAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1GBIT 128MX8/64MX16 120NS 64BGA - Trays |
| S29GL01GP12FAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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