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參數資料
| 型號： | S29GL01GP12FACR13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1G X 1 FLASH 3V PROM, 120 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數： | 34/80頁 |
| 文件大小： | 2706K |
| 代理商： | S29GL01GP12FACR13 |
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4
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
Performance Characteristics
Notes
1. Access times are dependent on VCC and VIO operating ranges.
See Ordering Information page for further details.
Regulated VCC: VCC = 3.0–3.6 V.
Full VCC: VCC = VIO = 2.7–3.6 V.
VersatileIO VIO: VIO = 1.65–VCC, VCC = 2.7–3.6 V.
2. Contact a sales representative for availability.
Maximum Read Access Times (ns)
Density
Voltage Range (1)
Random Access
Time (tACC)
Page Access Time
(tPACC)
CE# Access Time
(tCE)
OE# Access Time
(tOE)
128 & 256 Mb
Regulated VCC
90
25
90
25
Full VCC
100/110
VersatileIO VIO
110
512 Mb
Regulated VCC
100
25
100
25
Full VCC
100 (2)/110
100 (2)/110
VersatileIO VIO
110 (2)/120
110 (2)/120
1 Gb
Regulated VCC
110
25
110
25
Full VCC
120
VersatileIO VIO
130
Current Consumption (typical values)
Random Access Read (f = 5 MHz)
30 mA
8-Word Page Read (f = 10 MHz)
1 mA
Program/Erase
50 mA
Standby
1 A
Program & Erase Times (typical values)
Single Word Programming
60 s
Effective Write Buffer Programming (VCC) Per Word
15 s
Effective Write Buffer Programming (VHH) Per Word
13.5 s
Sector Erase Time (64 Kword Sector)
0.5 s
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| S29GL01GP12FAI010 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1GBIT 128MX8/64MX16 120NS 64BGA - Trays |
| S29GL01GP12FAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12FAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12FAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1GBIT 128MX8/64MX16 120NS 64BGA - Trays |
| S29GL01GP12FAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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