參數(shù)資料
型號(hào)： S29AL032D90TFI043
廠商： SPANSION LLC
元件分類： PROM
英文描述： 32 Megabit CMOS 3.0 Volt-only Flash Memory
中文描述： 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： LEAD FREE, MO-142DD, TSOP-48
文件頁(yè)數(shù)： 63/67頁(yè)
文件大?。?/td> 1708K
代理商： S29AL032D90TFI043
64
S29AL032D
S29AL032D_00_A8 November 2, 2006
Da ta
Sh e e t
21. Revision History
Section
Description
Revision A0 (January 31, 2005)
Initial release.
Revision A1 (March 16, 2005)
Distinctive Characteristics
Revised Secured Silicon Sector with 128-word information.
Common Flash Memory Interface — (CFI)
Modified Primary Vendor-Specific Extended Query table information for 45h address..
Revision A2 (April 19, 2005)
Valid Combinations Table
Clarified available packing types for TSOP and FBGA package. Modified Note 1.
Device Bus Operations
Added Secured Silicon Sector Addresses—Model 00 table
Modified Top Boot Secured Silicon Sector Addresses—Model 03 and Bottom Boot Secured
Silicon Sector Addresses—Model 04 tables
S29AL032D Command Definitions Model
00 table
Added Secured Silicon Sector Factory Protect information.
Accelerated Program Operation
Added section.
Secured Silicon Sector
Added section.
AC Characteristics
Added ACC programming timing diagram.
Revision A3 (June 13, 2005)
Autoselect Mode
Updated Table 8 to include models 00, 03, and 04.
Common Flash Memory Interface
Updated table headings in table 12, 13, 14, and 15.
Absolute Maximum Rating
Updated figure 8.
DC Characteristics
Updated CMOS Compatible table.
AC Characteristics
Updated Erase/Program Operations table. Added new figure: Back-to-Back Read/Write Cycle
Timing. Updated Alternate CE# Controlled Erase/Program Operations table.
Revision A4 (July 29, 2005)
DS Status
Change of DS status to “Preliminary” from “Advance Information”.
Output Disable Mode
Updated Model 00 Secured Silicon Sector Analysis table.
Autoselect Mode
Updated S29AL032D Autoselect Codes (High Voltage Method) table.
Revision A5 (September 21, 2005)
DS Status
Change of DS status to “Preliminary” from “Advance Information”.
Sector Protection/Unprotection
Corrected “In-System Sector Protect/Unprotect Algorithms” figure.
Revision A6 (May 22, 2006)
AC Characteristics
Added tSR/W parameter to read and erase/program operations tables. Added back-to-back read/
write cycle timing diagram. Changed maximum value for tDF and tFLQZ.
Revision A7 (June 19, 2006)
Ordering Information
Added extended temperature range options to valid combinations.
Common Flash Memory Interface (CFI)
Primary Vendor-Specific Extended Query table: Change description for data at address 4Fh
(address 9Eh on Models 03, 04).
DC Characteristics
Changed Note 4.
Read Operations Timings figure
Connected end of tRC period to start of tOH period.
Erase and Programming Performance
Added Notes 7 and 8 to table.
Revision A8 (November 2, 2006)
Valid Combinations
Updated table.
相關(guān)PDF資料
PDF描述
S29CD016G0JDEI004 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
S29CD016G0JDEI007 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
S29CD032J1JFAI122 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
S29CD032J1MFAN120 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
S29CD032J1MQFN133 1M X 32 FLASH 2.7V PROM, 54 ns, PQFP80
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