參數(shù)資料
型號(hào)： S25FL064A0LNAI00
廠商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： 64M X 1 FLASH 3V PROM, PDSO16
封裝： 0.300 INCH, PLASTIC, MS-013AA, SOP-16
文件頁(yè)數(shù)： 20/36頁(yè)
文件大?。?/td> 1495K
代理商： S25FL064A0LNAI00
28
S25FL064A
S25FL064A_00_C3 June 29, 2007
Da ta
Sh e e t
9.12.1
Release from Deep Power Down and Read Electronic Signature (RES)
The device features an 8-bit Electronic Signature, which can be read using the RES command. See
Figure 9.13 and Table 9.4 on page 28 for the command sequence and signature value. The Electronic
Signature is not to be confused with the identification data obtained using the RDID command. The device
offers the Electronic Signature so that it can be used with previous devices that offered it; however, the
Electronic Signature should not be used for new designs, which should read the RDID data instead.
After the host system drives CS# low, it must write the RES command followed by 3 dummy bytes to SI (each
bit is latched on SI during the rising edge of SCK). The Electronic Signature is then output on SO; each bit is
shifted out on the falling edge of SCK. The RES operation is terminated by driving CS# high after the
Electronic Signature is read at least once. Additional clock cycles on SCK with CS# low cause the device to
output the Electronic Signature repeatedly.
When CS# is driven high, the device transitions from DP mode to the standby mode after a delay of tRES, as
previously described. The RES command always provides access to the Electronic Signature of the device
and can be applied even if DP mode has not been entered.
Any RES command issued while an erase, program, or WRSR operation is in progress not executed, and the
operation continues uninterrupted.
Figure 9.13 Release from Deep Power Down and Read Electronic Signature (RES)
Command Sequence
Notes
1.
The S25FL064A has a manufacturer ID of 01h, and a device ID consisting of the memory type (02h) and the memory capacity (16h).
2. The S25FL064A has an Electronic Signature ID of 16h.
Table 9.4 Command Definitions
Operation
Command
Description
One-Byte
Command Code
Address
Bytes
Dummy
Byte
Data Bytes
Read
READ
Read Data Bytes
03H (0000 0011)
3
0
1 to
∞
FAST_READ
Read Data Bytes at Higher Speed
0BH (0000 1011)
3
1
1 to
∞
RDID
Read Identification (Note 1)
9FH (1001 1111)
0
1 to 3
Write Control
WREN
Write Enable
06H (0000 0110)
0
WRDI
Write Disable
04H (0000 0100)
0
Erase
SE
Sector Erase
D8H (1101 1000)
3
0
BE
Bulk (Chip) Erase
C7H (1100 0111)
0
Program
PP
Page Program
02H (0000 0010)
3
0
1 to 256
Status Register
RDSR
Read from Status Register
05H (0000 0101)
0
1 to
∞
WRSR
Write to Status Register
01H (0000 0001)
0
1
Power Saving
DP
Deep Power Down
B9H (1011 1001)
0
RES
Release from Deep Power Down
ABH (1010 1011)
0
Release from Deep Power Down and
Read Electronic Signature (Note 2)
ABH (1010 1011)
0
3
1 to
∞
CS#
SCK
SI
SO
3 Dummy Bytes
Hi-Z
MSB
Deep Power-down Mode
Standby Mode
0
1
2
3
45
6
7
8
9
10
28 29 30 31 32
33 34 35 36
37
38
Electronic ID out
Command
tRES
23 22 21
3
2
10
7
65
4
3
2
1
0
MSB
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