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參數(shù)資料
| 型號： | RFP10P03L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 10 A, 30 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 133K |
| 代理商： | RFP10P03L |
7-7
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-80
-40
0
40
80
120
160
0.4
0.8
1.0
1.2
T
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= -250
μ
A
0.6
125
20
30
40
50
0
25
100
150
50
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
d(OFF)
t
d(ON)
t
r
t
f
75
V
DD
= -15V, I
D
= -10A, R
L
= 1.50
-30
-22.5
-15
-7.5
0
-5.00
-3.75
-2.50
-1.25
0.00
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
DD
= BV
DSS
R
L
= 3.0
I
G(REF)
= -0.25mA
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
D
,
V
G
,
V
GS
= -5V
V
DD
=BV
DSS
800
600
400
200
0
0
-5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
-15
-20
-25
C
1200
C
ISS
C
OSS
C
RSS
1000
V
GS
= 0V, f = 0.1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFD10P03L, RFD10P03LSM, RFP10P03L
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| RFD10P03L | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應(yīng)管) |
| RFD10P03LSM | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應(yīng)管) |
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