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參數(shù)資料
| 型號(hào)： | RFP10P03L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 10 A, 30 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 133K |
| 代理商： | RFP10P03L |
7-6
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-50
-10
-1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L) (I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R = 0
0
0
-1
-2
-3
-5
-10
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -10V
-4
-20
-15
-25
-5
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= -4V
V
GS
= -3.5V
V
GS
= -3V
V
GS
= -5V
0
-3.0
-4.5
-6.0
-1.5
0
-10
175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
-20
-25
-15
-5
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
r
D
D
0
100
200
300
400
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -20A
I
D
= -10A
I
D
= -5A
I
D
= -2.5A
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
N
2.0
0.5
0
-40
0
40
T
, JUNCTION TEMPERATURE (
o
C)
120
1.0
80
1.5
160
200
-80
V
GS
= -5V, I
D
= -10A
O
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
N
1.2
1.0
0.9
0.8
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.1
80
B
-80
160
200
I
D
=- 250uA
RFD10P03L, RFD10P03LSM, RFP10P03L
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