參數(shù)資料
型號: RFP10P15
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: P-Channel Power MOSFET(P溝道增強模式功率MOS場效應管)
中文描述: 10 A, 150 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 1/5頁
文件大?。?/td> 305K
代理商: RFP10P15
1
File Number
1595.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
407-727-9207
|
Copyright
Intersil Corporation 1999
RFP10P15
-10A, -150V, 0.500 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is designed for applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9404.
Features
-10A, -150V
r
DS(ON)
= 0.500
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP10P15
TO-220AB
RFP10P15
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Data Sheet
October 1999
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