參數(shù)資料
型號(hào): RFP10P03L
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述: 10 A, 30 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 133K
代理商: RFP10P03L
7-5
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
-4
-2
0
25
50
75
100
125
150
-8
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-12
-6
175
-10
t, RECTANGULAR PULSE DURATION (s)
10
1
Z
θ
J
,
10
-3
10
-2
10
-1
10
0
10
-5
10
-4
1.0
0.01
0.1
NOTES: DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.1
0.02
0.01
0.2
0.5
0.05
SINGLE PULSE
2.0
-100
-10
-1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
MAX = -30V
100ms
DC
T
J
= MAX RATED
T
C
= 25
C
10ms
1ms
100
μ
s
10
-5
10
-4
10
-3
t, PULSE WIDTH (s)
10
-2
10
-1
10
0
10
1
-10
I
D
,
V
GS
= -10V
V
GS
= -5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-5
I
I25
175
-------150
=
T
C
= 25
o
C
-100
RFD10P03L, RFD10P03LSM, RFP10P03L
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