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參數(shù)資料
| 型號(hào)： | RFG60P06E |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET(60A, 60V, 0.030 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 60 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 65K |
| 代理商： | RFG60P06E |
4-157
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-200
-100
-10
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
V
GS
= -5V
V
GS
= -7V
V
GS
= -6V
V
GS
= -8V
V
GS
= -4.5V
V
GS
= -20V
V
GS
= -10V
0
0
-2
-4
-6
-8
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-30
-60
-90
-120
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
-30
-60
-120
-90
175
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= -60A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
200
T
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= - 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= -250
μ
A
RFG60P06E
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