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參數(shù)資料
| 型號： | RFG60P06E |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET(60A, 60V, 0.030 Ω,P溝道功率MOS場效應管) |
| 中文描述： | 60 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 65K |
| 代理商： | RFG60P06E |
4-156
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
P
T
C
, CASE TEMPERATURE (
o
C)
-50
-40
-30
-20
-10
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-60
-70
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Z
θ
J
T
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.01
0.02
0.05
0.1
0.2
0.5
SINGLE PULSE
-500
-100
-10
-1
-1
-10
-60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
100
μ
s
10ms
100ms
DC
V
DSS
MAX = -60V
I
D
,
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
10
-5
10
-4
10
-3
t, PULSE WIDTH (ms)
10
-2
10
-1
10
0
10
1
-100
-10
3
I
D
,
-50
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
-------150
–
=
T
C
= 25
o
C
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
RFG60P06E
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