參數(shù)資料
型號(hào)： RFG60P06E
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET(60A, 60V, 0.030 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 60 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 65K
代理商： RFG60P06E
4-155
Absolute Maximum Ratings
T
C
= 25
o
C
RFG60P06E
-60
-60
±
20
60
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3, Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
SD
MIL-STD-883, Category B(2)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Refer to Peak Current Curve
Refer to UIS Curve
2
KV
215
1.43
W
W/
o
C
o
C
-55 to 175
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= -60V,
V
GS
= 0V
-60
-
-
V
Gate To Threshold Voltage
-2
-
-4
V
Zero Gate Voltage Drain Current
T
C
= 25
o
C
T
C
= 150
o
C
-
-
-1
μ
A
-
-
-50
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
GS
=
±
20V
I
D
= 60A, V
GS
= -10V
V
DD
= -30V, I
D
= 30A,
R
L
= 1.0
, V
GS
= -10V,
R
GS
= 2.5
-
-
100
nA
Drain to Source On Resistance
-
-
0.030
W
Turn-On Time
-
-
125
ns
Turn-On Delay Time
-
20
-
ns
Rise Time
-
60
-
ns
Turn-Off Delay Time
-
65
-
ns
Fall Time
-
20
-
ns
Turn-Off Time
-
-
125
ns
Total Gate Charge
V
GS
= 0 to -20V
V
GS
= 0 to -10V
V
GS
= 0 to -2V
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
V
DD
= -48V,
I
D
= 60A,
R
L
= 0.8
-
-
450
nC
Gate Charge at -10V
-
-
225
nC
Threshold Gate Charge
-
-
15
nC
Input Capacitance
-
7200
-
pF
Output Capacitance
-
1700
-
pF
Reverse Transfer Capacitance
-
325
-
pF
Thermal Resistance Junction to Case
-
-
0.70
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
I
SD
= 45A
I
SD
= 45A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Diode Reverse Recovery Time
-
-
125
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s maximum, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFG60P06E
相關(guān)PDF資料
PDF描述
RFG60P06E 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET
RFG70N06 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs
RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs
RFG70N06 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs
RFG75N05E 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFG6621-847H 制造商:AUTOMT 功能描述:
RFG6X8 制造商:Panduit Corp 功能描述:CBL ACC COOL BOOT RAISED FLOOR ASSY FLAME RETARDANT VINYL CO - Bulk
RFG6X8SM 制造商:Panduit Corp 功能描述:Cable Accessories Cool Boot Raised Floor Assembly Flame Retardant Vinyl Coated Fabric/Flame Retardant Thermoplastic Vulcanizate
RFG6X8SMY 制造商:Panduit Corp 功能描述:Cable Accessories Raceway Power Rated Rigid Polyvinyl Chloride Blue
RFG6X8Y 制造商:Panduit Corp 功能描述:Cable Accessories Raceway Power Rated Rigid Polyvinyl Chloride Blue
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*