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參數(shù)資料
| 型號： | RFG75N05E |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET |
| 中文描述： | 75 A, 50 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 53K |
| 代理商： | RFG75N05E |
4-481
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG75N05E
75A, 50V 0.008 Ohm, N-Channel Power
MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09821.
Features
75A, 50V
r
DS(ON)
= 0.008
Electrostatic Discharge Rated
UIS Rating Curve (Single Pulse)
175
o
C Operating Temperature
Temperature Compensated PSPICE
Model Provided
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG75N05E
TO-247
RFG75N05E
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
July 1999
Data Sheet
File Number
2275.5
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