參數資料
型號： RFD3N08L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述： 3 A, 80 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數： 7/8頁
文件大小： 69K
代理商： RFD3N08L
6-32
PSPICE Electrical Model
SUBCKT RFD3N08L 2 1 3 ;
rev 5/10/95
CA 12 8 4.10e-10
CB 15 14 3.25e-10
CIN 6 8 1.10e-10
DBODY 7 5 DBDMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 93.57
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRESH 6 21 19 8 1
EZTEMPCO 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.8e-9
LSOURCE 3 7 5.8e-9
MOS1 16 6 8 8 MSTRONG M = 0.80
MOS2 16 21 8 8 MWEAK M = 0.20
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 174.2e-3
RGATE 9 20 24.9
RIN 6 8 1e9
RLDRAIN 2 5 10
RLGATE 1 9 58
RLSOURCE 3 7 58
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 200.2e-3
RTHRESH 22 8 RTHRESHMOD 1
RZTEMPCO 18 19 RZTEMPCOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*10),6))}
.MODEL DBDMOD D (IS = 9.90e-14 RS = 6.00e-2 TRS1 = 1.42e-3 TRS2 = -3.58e-6 CJO = 1.40e-10 TT = 5.75e-8 M = 0.4)
.MODEL DBREAKMOD D (RS = 2.32 TRS1 = 1.03e-3 TRS2 = -6.17e-11)
.MODEL DPLCAPMOD D (CJO = 1.13e-10 IS = 1e-30 N = 10 M=0.6)
.MODEL MSTRONG NMOS (VTO = 1.773 KP = 1.70 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u)
.MODEL MWEAK NMOS (VTO = 1.496 KP = 2.09 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u)
.MODEL RBREAKMOD RES (TC1 = 8.19e-4 TC2 = 5.9e-7)
.MODEL RDRAINMOD RES (TC1 = 1.55e-2 TC2 = 8.58e-5)
.MODEL RDSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RSCLMOD RES (TC1 = 0 TC2 = 0)
.MODEL RTHRESHMOD RES (TC1 = -5.0e-4 TC2 = -6.0e-6)
.MODEL RZTEMPCOMOD RES (TC1 = -1.19e-3 TC2 = 1.12e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.2 VOFF= -3.2)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.2 VOFF= -5.2)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.60 VOFF= 4.4)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.4 VOFF= -0.60)
.ENDS
NOTE:
1. For further discussion of the PSPICE model, consult
A New PSPICE Sub-circuit for the Power MOSFET
Featuring Global Temperature Options; IEEE
Power Electronics Specialist Conference Records, 1991.
1
GATE
LGATE
RGATE
EZTEMPCO
+
20
18
22
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
RIN
CIN
MOS1
MOS2
DBREAK
EBREAK
DBODY
LDRAIN
DRAIN
2
RSOURCE
LSOURCE
SOURCE
RBREAK
RZTEMPCO
VBAT
+
IT
EVTHRESH
+
19
8
ESG
DPLCAP
6
6
8
10
5
16
21
11
17
18
8
14
5
8
6
8
7
3
17
18
+
+
+
+
9
RLGATE
RLSOURCE
RLDRAIN
19
22
RTHRESH
RDRAIN
ESCL
RSCL1
51
+
RSCL2
50
5
51
RFD3N08L, RFD3N08LSM
相關PDF資料
PDF描述
RFD3N08LSM 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
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相關代理商/技術參數
參數描述
RFD3N08LSM 制造商:Harris Corporation 功能描述:
RFD3N08LSM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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RFD4N06LSM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD4N06LSM9A 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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