參數(shù)資料
型號： RFD3N08L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述： 3 A, 80 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 69K
代理商： RFD3N08L
6-27
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD3N08L,
RFD3N08LSM
80
80
±
10
3
Refer to Peak Current Curve
30
0.2
Refer to UIS Curve
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20K
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Figures 3, 5) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Avalanche Energy Rating (Figure 6) (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
,
V
GS
= 0V 125
o
C
V
GS
=
±
10V
I
D
= 3A, V
GS
= 5V, (Figures 9, 10)
V
DD
= 40V, I
D
= 3A,
R
L
= 13.3
,
V
GS
= 5V,
R
G
= 25
,
(Figures 13, 15, 18, 19)
80
-
-
V
Gate to Threshold Voltage
1
-
2.5
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
t
(OFF)
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
-
0.800
Turn-On Time
-
-
75
ns
Turn-On Delay Time
-
15
-
ns
Rise Time
-
45
-
ns
Turn-Off Delay Time
-
22
-
ns
Fall Time
-
15
-
ns
Turn-Off Time
-
-
45
ns
Total Gate Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DS
= 25V, V
GS
= 0V, f = 1MHz,
(Figure 14)
V
DD
= 64V, I
D
= 3A,
I
g(REF)
= 0.1mA
R
L
= 21.3
(Figures 15, 20, 21)
-
6.8
8.5
nC
Gate Charge at 5V
-
3.8
4.8
nC
Threshold Gate Charge
-
0.18
0.24
nC
Input Capacitance
-
-
125
pF
Output Capacitance
-
-
55
pF
Reverse Transfer Characterisics
-
-
15
pF
Thermal Resistance, Junction to Case
-
-
5.0
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
-
-
100
Source to Drain Diode Ratings and Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
I
SD
= 3A
I
SD
= 3A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
Reverse Recovery Time
-
-
85
ns
NOTES:
2. Pulsed: pulse duration = 300
μ
s max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. Refer to Intersil Application Notes AN9321 and AN9322.
RFD3N08L, RFD3N08LSM
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相關代理商/技術參數(shù)
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