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參數(shù)資料
| 型號(hào)： | RFD3N08L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 3 A, 80 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 69K |
| 代理商： | RFD3N08L |
6-28
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
0.5
0
25
50
75
100
125
150
1.5
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
3.5
3.0
2.5
2.0
175
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
SINGLE PULSE
T
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
0.1
1
20
10
I
D
,
V
DSS
MAX = 80V
T
C
= 25
o
C
T
J
= MAX RATED
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
DC
100
μ
s
200
1ms
10ms
100ms
t, PULSE WIDTH (s)
30
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
T
C
= 25
o
C
RFD3N08L, RFD3N08LSM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD3N08LSM | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06L | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06L | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD3N08LSM | 制造商:Harris Corporation 功能描述: |
| RFD3N08LSM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFD4N06L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD4N06LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD4N06LSM9A | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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