- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374586 > RFD3N08L (HARRIS SEMICONDUCTOR) 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | RFD3N08L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 3 A, 80 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 69K |
| 代理商： | RFD3N08L |
6-29
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0.1
1
10
0.01
20
1
0.001
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
2
4
6
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
8
10
V
GS
= 3V
I
D
,
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
V
GS
= 3.5V
V
GS
= 4.5V
T
C
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
3
4.5
6
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
I
D
,
-55
o
C
175
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0.5
1
1.5
2
2.5
0
2.5
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
3
2
I
D
= 0.75A
I
D
= 1.5A
I
D
= 3A
I
D
= 4A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
0.5
1
1.5
3
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
160
2.5
2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 3A
-80
-40
0
40
80
120
200
0
0.5
1
1.5
2
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
160
V
GS
= V
DS
, I
D
= 250
μ
A
RFD3N08L, RFD3N08LSM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD3N08LSM | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06L | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06L | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD3N08LSM | 制造商:Harris Corporation 功能描述: |
| RFD3N08LSM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFD4N06L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD4N06LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD4N06LSM9A | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。