參數(shù)資料
型號(hào)： RF3133
廠商： RF Monolithics, Inc.
英文描述： QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE
中文描述： 四頻GSM850/GSM/DCS/PCS功率放大器模塊
文件頁(yè)數(shù)： 2/16頁(yè)
文件大小： 196K
代理商： RF3133
2-460
RF3133
Rev A4 030527
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
RAMP
)
Input RF Power
Max Duty Cycle
Output Load VSWR
Operating Temperature
Storage Temperature
Rating
-0.3 to +6.0
-0.3 to +1.8
+11.5
50.0
10:1
-20 to +85
-55 to +150
Unit
V
DC
V
dBm
%
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Power Control V
RAMP
Power Control “ON”
Power Control “OFF”
Power Control Range
V
RAMP
Input Capacitance
V
RAMP
Input Current
Turn On/Off Time
Overall Power Supply
Power Supply Voltage
1.5
0.25
V
V
dB
pF
μ
A
μ
S
Max. P
OUT
, Voltage supplied to the input
Min. P
OUT
, Voltage supplied to the input
V
RAMP
=0.2V to V
RAMP MAX
DC to 2MHz
V
RAMP
=V
RAMP MAX
V
RAMP
=0V to V
RAMP MAX
0.2
35
15
20
10
2
3.5
V
V
V
V
Specifications
Nominal operating limits
50% duty cycle, Pulse width=2308
μ
s
50% duty cycle, 824MHz to 915MHz
50% duty cycle, 1710MHz to 1910MHz
P
IN
<-30dBm, TXEnable=Low,
Temp=-20°C to +85°C
3.0
3.0
0.2
0.2
5.5
4.3
1.33
1.28
10
V
RAMP
Power Supply Current
1
μ
A
V
REG
Voltage
2.7
2.8
2.9
V
V
REG
Current
7
8
mA
μ
A
TX Enable=High
TX Enable=Low
10
Overall Control Signals
Band Select “Low”
Band Select “High”
Band Select “High” Current
TX Enable “Low”
TX Enable “High”
TX Enable “High” Current
Note: V
RAMP
Max=3/8*V
BATT
+0.18<1.5V
0
0
0.5
3.0
50
0.5
3.0
2
V
V
μ
A
V
V
μ
A
1.3
2.0
20
0
2.0
1
0
1.3
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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