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參數資料
| 型號： | RF3133 |
| 廠商： | RF Monolithics, Inc. |
| 英文描述： | QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE |
| 中文描述： | 四頻GSM850/GSM/DCS/PCS功率放大器模塊 |
| 文件頁數： | 13/16頁 |
| 文件大?。?/td> | 196K |
| 代理商： | RF3133 |
2-471
RF3133
Rev A4 030527
Switching transients occur when the up and down ramp of the burst is not smooth enough or suddenly changes shape. If
the control slope of a PA has an inflection point within the output power range or if the slope is simply to steep it is difficult
to prevent switching transients. Controlling the output power by changing the collector voltage is as earlier described
based on the physical relationship between voltage swing and output power. Furthermore all stages are kept constantly
biased so inflection points are nonexistent.
Harmonics are natural products of high efficiency power amplifier design. An ideal class “E” saturated power amplifier
will produce a perfect square wave. Looking at the Fourier transform of a square wave reveals high harmonic content.
Although this is common to all power amplifiers, there are other factors that contribute to conducted harmonic content as
well. With most power control methods a peak power diode detector is used to rectify and sense forward power. Through
the rectification process there is additional squaring of the waveform resulting in higher harmonics. The RF3133 address
this by eliminating the need for the detector diode. Therefore the harmonics coming out of the PA should represent the
maximum power of the harmonics throughout the transmit chain. This is based upon proper harmonic termination of the
transmit port. The receive port termination on the T/R switch as well as the harmonic impedance from the switch itself
will have an impact on harmonics. Should a problem arise, these terminations should be explored.
The RF3133 incorporates many circuits that had previously been required external to the power amplifier. The shaded
area of the diagram below illustrates those components and the following table itemizes a comparison between the
RF3133 Bill of Materials and a conventional solution:
Note: Output power is limited by battery voltage. The relationship in Equation 4 does not limit output power. Equation 4
limits V
RAMP
to correspond with the battery voltage.
Component
Conventional
Solution
$0.80
$0.20
$0.05
$0.05
$0.05
$0.12
RF3133
Power Control ASIC
Directional Coupler
Buffer
Attenuator
Various Passives
Mounting Yield
(other than PA)
Total
N/A
N/A
N/A
N/A
N/A
N/A
$1.27
$0.00
From DAC
*Shaded area eliminated with Indirect Closed Loop using RFMD's Integrated Power Control Solution
Traditional Triple-Band PA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| RF3133_05 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE |
| RF3133PCBA | 制造商:RFM 制造商全稱:RF Monolithics, Inc 功能描述:QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE |
| RF3133PCBA-41X | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE |
| RF313-5 | 功能描述:高頻/射頻繼電器 5V DC-6GHz .15W hi sensitivity RoHS:否 制造商:Omron Electronics 觸點形式:2 Form C (DPDT-BM) 觸點電流額定值: 線圈電壓:5 VDC 線圈類型:Non-Latching 頻率: 功耗:100 mW 端接類型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz |
| RF313-5/G | 制造商:Teledyne Relays 功能描述: |
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