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參數(shù)資料
| 型號： | RF3133 |
| 廠商： | RF Monolithics, Inc. |
| 英文描述： | QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE |
| 中文描述： | 四頻GSM850/GSM/DCS/PCS功率放大器模塊 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 196K |
| 代理商： | RF3133 |
2-468
RF3133
Rev A4 030527
T heory of Operation
Overview
The RF3133 is a quad-band GSM/DCS/PCS power amplifier module that incorporates an indirect closed loop method of
power control. This simplifies the phone design by eliminating the need for the complicated control loop design. The indi-
rect closed loop is fully self contained and required does not require loop optimization. It can be driven directly from the
DAC output in the baseband circuit.
Theory of Operation
The indirect closed loop is essentially a closed loop method of power control that is invisible to the user. Most power con-
trol systems in GSM sense either forward power or collector/drain current. The RF3133 does not use a power detector. A
high-speed control loop is incorporated to regulate the collector voltages of the amplifier while the stages are held at a
constant bias. The V
RAMP
signal is multiplied and the collector voltages are regulated to the multiplied V
RAMP
voltage.
The basic circuit is shown in the following diagram.
By regulating the power, the stages are held in saturation across all power levels. As the required output power is
decreased from full power down to 0dBm, the collector voltage is also decreased. This regulation of output power is
demonstrated in Equation 1 where the relationship between collector voltage and output power is shown. Although load
impedance affects output power, supply fluctuations are the dominate mode of power variations. With the RF3133 regu-
lating collector voltage, the dominant mode of power fluctuations is eliminated.
)
2
(Eq. 1)
There are several key factors to consider in the implementation of a transmitter solution for a mobile phone. Some of
them are:
Effective efficiency (
η
eff
)
Current draw and system efficiency
Power variation due to Supply Voltage
Power variation due to frequency
Power variation due to temperature
Input impedance variation
Noise power
Loop stability
Loop bandwidth variations across power levels
Burst timing and transient spectrum trade offs
Harmonics
RF IN
TX ENABLE
RF OUT
H(s)
VRAMP
TX ENABLE
VBATT
P
dBm
10
2
V
8
R
LOAD
10
V
–
-------------------------------------------
log
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF3133_05 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE |
| RF3133PCBA | 制造商:RFM 制造商全稱:RF Monolithics, Inc 功能描述:QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE |
| RF3133PCBA-41X | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE |
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