參數(shù)資料
型號： RF1K4909296
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 12V V(BR)DSS | 3.5A I(D) | SO
中文描述： 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 3/14頁
文件大?。?/td> 459K
代理商： RF1K4909296
2002 Fairchild Semiconductor Corporation
RF1K49092 Rev. B
P-Channel Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V, (Figure 34)
-12
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 33)
-1
-
-2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -12V,
V
GS
= 0V
T
A
= 25
o
C
T
A
= 150
o
C
-
-
-1
μ
A
-
-
-50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V
-
-
±
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 2.5A, V
GS
= -5V
-
-
0.130
Turn-On Time
t
ON
V
DD
= -6V, I
D
≈
2.5A,
R
L
= 2.40
, V
GS
= -5V,
R
GS
= 25
(Figure 31)
-
-
115
ns
Turn-On Delay Time
t
d(ON)
-
25
-
ns
Rise Time
t
r
-
65
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
45
-
ns
Turn-Off Time
t
OFF
-
-
110
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -10V
V
DD
= -9.6V,
I
D
= 2.5A,
R
L
= 3.84
(Figure 36)
-
19
24
nC
Gate Charge at -5V
Q
g(-5)
V
GS
= 0V to -5V
-
10
14
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -1V
-
0.8
1.1
nC
Input Capacitance
C
ISS
V
DS
= -10V, V
GS
= 0V,
f = 1MHz (Figure 35)
-
775
-
pF
Output Capacitance
C
OSS
-
550
-
pF
Reverse Transfer Capacitance
C
RSS
-
150
-
pF
Thermal Resistance Junction-to-Ambient
R
θ
JA
Pulse width = 1s
Device mounted on FR-4 material
-
-
62.5
o
C/W
P-Channel Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Voltage
V
SD
I
SD
= -2.5A
-
-
-1.25
V
Reverse Recovery Time
t
rr
I
SD
= -2.5A, dI
SD
/dt = -100A/
μ
s
-
-
55
ns
Typical Performance Curves (N-Channel)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
2.0
1.0
0.5
0.0
25
50
75
100
125
150
1.5
3.0
2.5
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
4.0
3.5
RF1K49092
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