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參數(shù)資料
| 型號： | RF1K49154 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET |
| 中文描述： | 2 A, 60 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 421K |
| 代理商： | RF1K49154 |
1
File Number
4143.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RF1K49154
2A, 60V, 0.130 Ohm, Dual N-Channel,
LittleFET Power MOSFET
This Dual N-Channel power MOSFET is manufactured using
the latest manufacturing process technology. This process,
which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. These devices can be operated directly from
integrated circuits.
Formerly developmental type TA49154.
Features
2A, 60V
r
DS(ON)
= 0.130
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49154
MS-012AA
RF1K49154
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e., RF1K4915496.
G1(2)
D1(8)
D1(7)
S1(1)
D2(6)
D2(5)
S2(3)
G2(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
October 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1K4915496 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SO |
| RF1K49156 | 6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET |
| RF1K49156 | 874271042 |
| RF1K49157 | 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET⑩ Power MOSFET |
| RF1K49157 | 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET⑩ Enhancement Mode Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4915496 | 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49156 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4915696 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49157 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4915796 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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