參數(shù)資料
型號(hào)： RF1K4909296
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 12V V(BR)DSS | 3.5A I(D) | SO
中文描述： 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁(yè)數(shù)： 2/14頁(yè)
文件大小： 459K
代理商： RF1K4909296
2002 Fairchild Semiconductor Corporation
RF1K49092 Rev. B
Absolute Maximum Ratings
T
A
= 25
o
C Unless Otherwise Specified
N-CHANNEL
P-CHANNEL
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
, Note 1). . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . I
D
Pulsed (Figures 5, 26) . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating (Figures 6, 27). . . . . . . . . . . . . E
AS
Power Dissipation
T
A
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
-12
V
12
-12
V
±
10
±
10
V
3.5
Refer to Peak Current Curve
2.5
Refer to Peak Current Curve
A
Refer to UIS Curve
Refer to UIS Curve
2
0.016
2
0.016
W
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . .T
pkg
-55 to 150
-55 to 150
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
N-Channel Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V, (Figure 13)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 12)
V
DS
= 12V,
V
GS
= 0V
12
-
-
V
Gate Threshold Voltage
1
-
2
V
Zero Gate Voltage Drain Current
T
A
= 25
o
C
T
A
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
V
GS
=
±
10V
I
D
= 3.5A, V
GS
= 5V, (Figures 9, 11)
V
DD
= 6V, I
D
≈
3.5A,
R
L
= 1.71
, V
GS
= 5V,
R
GS
= 25
(Figure 10)
-
-
±
100
nA
Drain to Source On Resistance
-
-
0.050
Turn-On Time
-
-
100
ns
Turn-On Delay Time
-
18
-
ns
Rise Time
-
60
-
ns
Turn-Off Delay Time
-
50
-
ns
Fall Time
-
60
-
ns
Turn-Off Time
-
-
140
ns
Total Gate Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 9.6V,
I
D
= 3.5A,
R
L
= 2.74
(Figure 15)
-
20
25
nC
Gate Charge at 5V
-
12
15
nC
Threshold Gate Charge
-
0.9
1.2
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JA
V
DS
= 10V, V
GS
= 0V,
f = 1MHz (Figure 14)
-
750
-
pF
Output Capacitance
-
700
-
pF
Reverse Transfer Capacitance
-
275
-
pF
Thermal Resistance Junction to Ambient
Pulse width = 1s
Device mounted on FR-4 material
-
-
62.5
o
C/W
N-Channel Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Voltage
V
SD
I
SD
= 3.5A
I
SD
= 3.5A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
Reverse Recovery Time
t
rr
-
-
70
ns
RF1K49092
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