參數(shù)資料
型號: RF1K4909296
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 12V V(BR)DSS | 3.5A I(D) | SO
中文描述: 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù): 1/14頁
文件大小: 459K
代理商: RF1K4909296
2002 Fairchild Semiconductor Corporation
RF1K49092 Rev. B
RF1K49092
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic
Level, Complementary LittleFET Power
MOSFET
This complementary power MOSFET is manufactured using
an advanced MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. It is designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and low voltage bus switches. This product
achieves full rated conduction at a gate bias in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
Formerly developmental type TA49092.
Features
3.5A, 12V (N-Channel)
2.5A, 12V (P-Channel)
r
DS(ON)
= 0.050
(N-Channel)
r
DS(ON)
= 0.130
(P-Channel)
Temperature Compensating PSPICE
Model
On-Resistance vs Gate Drive Voltage Curves
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49092
MS-012AA
RF1K49092
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e., RF1K4909296.
G1 (2)
D1 (8)
D1 (7)
S1 (1)
D2 (6)
D2 (5)
S2 (3)
G2 (4)
BRANDING DASH
1
2
3
4
5
Data Sheet
January 2002
相關(guān)PDF資料
PDF描述
RF1K49092 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET
RF1K49092 Logic Level Complementary power MOSFET(邏輯電平可補償功率MOS場效應管)
RF1K49093 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET
RF1K49154 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
RF1K49154 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1K49093 功能描述:MOSFET SOIC-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4909396 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49154 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4915496 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49156 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube