參數(shù)資料
型號(hào)： RF1K49086
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET
中文描述： 3.5 A, 30 V, 0.132 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 7/7頁
文件大?。?/td> 195K
代理商： RF1K49086
5-63
Temperature Compensated PSPICE Model for the RF1K49086
SUBCKT RF1K49086 2 1 3 ;
rev 12/15/94
CA 12 8 1.75e-9
CB 15 14 1.80e-9
CIN 6 8 1.20e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 33.29
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.233e-9
LSOURCE 3 7 0.452e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 1.83
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 13.5e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.1
.MODEL DBDMOD D (IS = 2.50e-13 RS = 1.35e-2 TRS1 = 4.31e-5 TRS2 = 2.15e-5 CJO = 9.33e-10 TT = 2.08e-8)
.MODEL DBKMOD D (RS = 1.14 TRS1 = 2.23e-3 TRS2 = -8.91e-6)
.MODEL DPLCAPMOD D (CJO = 7.99e-10 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 2.15 KP = 6.25 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 7.74e-4 TC2 = 1.13e-6)
.MODEL RDSMOD RES (TC1 = 4.5e-3 TC2 = -7.45e-7)
.MODEL RVTOMOD RES (TC1 = -4.16e-3 TC2 = 2.16e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.15 VOFF= -5.15)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.15 VOFF= -7.15)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.6 VOFF= 2.4)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.4 VOFF= -2.6)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991.
1
GATE
LGATE RGATE
EVTO
18
8
+
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
RIN
CIN
MOS1
MOS2
RDRAIN
DBREAK
EBREAK
DBODY
LDRAIN
DRAIN
2
RSOURCE
LSOURCE
SOURCE
RBREAK
RVTO
VBAT
+
IT
VTO
ESG
DPLCAP
6
6
8
10
5
16
21
11
17
18
8
14
5
8
6
8
7
3
17
18
19
+
+
+
+
+
20
9
RF1K49086
相關(guān)PDF資料
PDF描述
RF1K49088 Dual N-Channel power MOSFET(雙路N溝道功率MOS場效應(yīng)管)
RF1K49088 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET
RF1K4909096 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 12V V(BR)DSS | 3.5A I(D) | SO
RF1K49090 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET⑩ Power MOSFET
RF1K49090 Dual N-Channel power MOSFET(雙路N溝道功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1K4908696 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
RF1K4908696136 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49088 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFET⑩ Power MOSFET
RF1K4908896 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
RF1K49090 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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