參數(shù)資料
型號(hào)： RF1K49086
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET
中文描述： 3.5 A, 30 V, 0.132 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 195K
代理商： RF1K49086
5-58
Absolute Maximum Ratings
T
A
= 25
o
C Unless Otherwise Specified
RF1K49086
30
30
±
20
UNITS
V
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Pulse Width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation
T
A
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
3.5
Refer to Peak Current Curve
Refer to UIS Curve
A
2
0.016
-55 to 150
260
W
W/
o
C
o
C
o
C
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
30
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1
-
3
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V,
V
GS
= 0V
T
A
= 25
o
C
-
-
1
μ
A
T
A
= 150
o
C
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 3.5A
V
GS
= 10V
-
-
0.060
V
GS
= 4.5V
-
-
0.132
Turn-On Time
t
ON
V
DD
= 15V, I
D
= 3.5A,
R
L
= 4.29
, V
GS
= 10V,
R
GS
= 25
-
-
50
ns
Turn-On Delay Time
t
d(ON)
-
10
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
60
-
ns
Fall Time
t
f
-
45
-
ns
Turn-Off Time
t
OFF
-
-
130
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 24V,
I
D
= 3.5A,
R
L
= 6.86
-
35
45
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
13
17
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
2.3
2.9
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
575
-
pF
Output Capacitance
C
OSS
-
275
-
pF
Reverse Transfer Capacitance
C
RSS
-
100
-
pF
Thermal Resistance Junction-to-Ambient
R
θ
JA
Pulse Width = 1s
Device mounted on FR-4 material
-
-
62.5
o
C/W
Source to Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 3.5A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 3.5A, dI
SD
/dt = 100A/
μ
s
-
-
45
ns
RF1K49086
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